AUIRFS8409-7TRL: High-Performance Automotive Power MOSFET for Advanced Switching Applications

Release date:2025-10-29 Number of clicks:180

AUIRFS8409-7TRL: High-Performance Automotive Power MOSFET for Advanced Switching Applications

The relentless drive towards vehicle electrification, advanced driver-assistance systems (ADAS), and more sophisticated onboard electronics demands power switching components that deliver uncompromising performance, reliability, and efficiency. The AUIRFS8409-7TRL from Infineon Technologies stands out as a premier N-channel power MOSFET engineered specifically to meet these rigorous automotive challenges. This device is a cornerstone for designers developing next-generation automotive systems where robust switching and thermal management are paramount.

Engineered for excellence, the AUIRFS8409-7TRL is built upon Infineon's advanced silicon trench technology. This foundation enables the MOSFET to achieve an exceptionally low on-state resistance (RDS(on)) of just 3.7 mΩ maximum. This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and improved fuel economy or electric vehicle range. The device is rated for a 150A continuous current, underscoring its capability to handle high-power loads in demanding applications such as electric power steering (EPS), braking systems, and DC-DC converters.

A key differentiator for this component is its AEC-Q101 qualification, guaranteeing its reliability and performance under the harsh conditions inherent to automotive environments. It operates effectively over a wide temperature range and is designed to withstand significant electrical and thermal stress. The low gate charge (Qg) and optimized switching characteristics further enhance its appeal for high-frequency switching applications. By reducing switching losses, it allows for higher operating frequencies, which in turn enables the use of smaller passive components like inductors and capacitors, leading to more compact and cost-effective system designs.

The TO-LL package offers a robust and thermally efficient housing. Its superior thermal performance ensures that heat is effectively dissipated away from the silicon die, maintaining junction temperatures within safe operating limits and significantly improving the module's long-term reliability. This package is also designed for ease of mounting in automated manufacturing processes, supporting high-volume production needs.

In application, the AUIRFS8409-7TRL is exceptionally versatile. It is ideally suited for a broad spectrum of automotive switching tasks, including:

High-Current DC-DC Converters in 48V and 12V systems.

Motor Control Modules for EPS, pumps, fans, and window lifters.

Solid-State Relay (SSR) Replacement in battery management systems (BMS) and power distribution units.

Load Switching in ADAS sensors and infotainment systems.

ICGOOODFIND: The AUIRFS8409-7TRL is a high-performance automotive-grade MOSFET that sets a high standard for power switching. Its combination of ultra-low RDS(on), high current handling, AEC-Q101 qualification, and superior thermal performance in a TO-LL package makes it an indispensable component for engineers designing reliable and efficient advanced automotive electronic systems.

Keywords: Automotive MOSFET, Low RDS(on), AEC-Q101, High-Current Switching, TO-LL Package.

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