NXP BUK9K17-60E/C4: A High-Performance 60V N-Channel Logic Level MOSFET

Release date:2026-06-02 Number of clicks:102

NXP BUK9K17-60E/C4: A High-Performance 60V N-Channel Logic Level MOSFET

In the realm of power electronics, efficiency, reliability, and compact design are paramount. The NXP BUK9K17-60E/C4 stands out as a premier solution, engineered to meet the rigorous demands of modern applications. This 60V N-channel logic level MOSFET is designed to deliver exceptional performance in switching and power management tasks, making it an ideal choice for a wide array of electronic systems.

One of the most significant advantages of the BUK9K17-60E/C4 is its logic level gate drive capability. This feature allows the MOSFET to be driven directly from microcontrollers, FPGAs, or other low-voltage control circuits (typically 5V or lower), eliminating the need for additional gate driver circuitry. This not only simplifies the design but also reduces the overall component count, board space, and system cost. Designers can achieve more compact and efficient layouts, which is crucial for space-constrained applications.

The device boasts an impressively low on-state resistance (RDS(on)) of just 4.5 mΩ (max) at 10 Vgs. This ultra-low resistance is a key factor in minimizing conduction losses. When the MOSFET is fully turned on, very little power is dissipated as heat, leading to significantly higher efficiency and cooler operation. This is particularly vital in high-current applications such as DC-DC converters, motor control systems, and power management units in consumer and industrial electronics, where energy loss directly impacts performance and thermal management.

Furthermore, the BUK9K17-60E/C4 is characterized by its robust 60V drain-source voltage (VDS) rating. This provides a substantial safety margin for handling voltage spikes and transients commonly encountered in 48V nominal systems, including telecommunications equipment, industrial automation, and automotive applications. The high voltage rating ensures long-term reliability and system durability under demanding operating conditions.

The MOSFET is housed in a TO-220 package, a industry-standard that offers an excellent balance of size and thermal performance. This package facilitates easy mounting and efficient heat dissipation, which is essential for maintaining performance under high power loads.

ICGOOFind: The NXP BUK9K17-60E/C4 is a superior logic-level MOSFET that excels by combining a low gate threshold voltage with an extremely low RDS(on). Its ability to be driven directly from low-voltage logic, its high efficiency, and its robust 60V rating make it an exceptionally versatile and reliable component for optimizing power conversion and switching designs across numerous industries.

Keywords: Logic Level Gate Drive, Low RDS(on), 60V Rating, High Efficiency, TO-220 Package.

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