Infineon IPB160N04S4-H1: A High-Performance 40V OptiMOS Power MOSFET for Automotive and Industrial Applications

In the demanding arenas of automotive and industrial electronics, the quest for higher efficiency, greater power density, and unwavering reliability is relentless. Addressing these challenges head-on, Infineon Technologies has developed the IPB160N04S4-H1, a state-of-the-art 40V OptiMOS power MOSFET engineered to set new benchmarks in performance.

This MOSFET is a cornerstone for power conversion and switching tasks. Its core strength lies in an exceptionally low typical on-state resistance (RDS(on)) of just 1.6 mΩ. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions. The device is housed in the robust and space-saving SuperSO8 package (PG-TDSON-8), which offers an excellent power-to-footprint ratio, making it ideal for modern, densely packed PCB designs.

The IPB160N04S4-H1 is not just about raw performance; it is built for the toughest environments. As an AEC-Q101 qualified component, it meets the stringent quality and reliability standards required for automotive applications. This makes it a perfect fit for a wide array of uses, including electric power steering (EPS), braking systems, transmission control units, and DC-DC converters in 48V mild-hybrid vehicles. Furthermore, its ruggedness and efficiency are equally valuable in industrial contexts, such as motor drives, solar inverters, and high-current switch-mode power supplies (SMPS).

Beyond low RDS(on), the device features low gate charge (Qg) and outstanding switching characteristics, which are critical for achieving high-frequency operation. This allows designers to increase switching frequencies without incurring significant switching losses, thereby enabling the use of smaller passive components like inductors and capacitors. The result is a overall reduction in system size, weight, and cost.

ICGOOODFIND: The Infineon IPB160N04S4-H1 stands out as a superior power MOSFET that masterfully balances ultra-low conduction loss, high switching performance, and automotive-grade robustness. It is an optimal choice for engineers designing next-generation automotive systems and high-reliability industrial equipment where maximizing efficiency and power density is non-negotiable.

Keywords: OptiMOS, Low RDS(on), AEC-Q101, Power Density, Automotive Grade.