Infineon IPD031N03LG OptiMOS 30V Power MOSFET in a SuperSO8 Package: A Benchmark in Power Density and Efficiency

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. Addressing this need, the Infineon IPD031N03LG OptiMOS 30V Power MOSFET stands out as a premier solution, expertly engineered within the compact SuperSO8 package. This device is specifically designed to set new standards in performance for a wide range of demanding applications, from server and telecom power supplies to battery management and synchronous rectification.

A key highlight of the IPD031N03LG is its exceptionally low on-state resistance (RDS(on)) of just 1.3 mΩ (max. at VGS = 10 V). This ultra-low resistance is the cornerstone of its superior performance, leading to minimized conduction losses. When a MOSFET operates with lower losses, it generates less heat, which directly translates to higher overall system efficiency and reduces the burden on thermal management systems. This allows designers to create more compact and reliable power solutions.

Housed in the SuperSO8 (SSO-8) package, this MOSFET offers a perfect synergy of high performance and a small footprint. The package is optimized for low parasitic inductance, which is critical for switching performance, especially in high-frequency applications. The robust package also features an excellent thermal resistance, enabling effective heat dissipation from the die to the PCB. This combination allows the IPD031N03LG to handle high continuous drain current (ID) up to 180 A, a remarkable feat for its size.

Furthermore, the device is characterized by its outstanding switching performance. The low gate charge (Qg) and figure of merit (FOM) ensure fast switching transitions, which are essential for reducing switching losses in high-frequency DC-DC converters. This capability is vital for achieving higher power density, as it allows engineers to increase switching frequencies, thereby shrinking the size of passive components like inductors and capacitors.

ICGOOODFIND: The Infineon IPD031N03LG OptiMOS 30V in a SuperSO8 package is a definitive choice for engineers pushing the limits of power design. Its industry-leading low RDS(on), superior thermal characteristics, and fast switching speed make it an unparalleled component for maximizing efficiency and power density in space-constrained applications.

Keywords: Low RDS(on), SuperSO8 Package, High Power Density, Synchronous Rectification, High Efficiency.