Infineon IPA60R190E6: A High-Performance 600V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ family, with the IPA60R190E6 standing out as a premier 600V superjunction MOSFET engineered to set new benchmarks in performance for switching power supplies and other demanding applications.

This transistor is built upon Infineon's advanced superjunction (SJ) technology, a cornerstone of the CoolMOS™ series. This technology fundamentally redefines the key trade-off between on-state resistance (RDS(on)) and gate charge (Qg). The result is a device that achieves an exceptionally low specific on-resistance, which directly translates to reduced conduction losses. The IPA60R190E6 boasts a maximum RDS(on) of just 0.190 Ω at a gate-source voltage of 10 V, ensuring minimal power is wasted as heat when the device is fully turned on.

However, efficiency in switching applications is not solely about conduction; switching losses are equally critical, especially at high operating frequencies. Here, the IPA60R190E6 excels with its exceptionally low gate charge (Qg) and outstanding figure of merit (FOM). The low Qg significantly reduces the energy required to turn the device on and off rapidly, enabling faster switching speeds. This allows designers to increase the switching frequency of their power converters, which in turn permits the use of smaller, lighter, and more cost-effective passive components like transformers and capacitors, thereby enhancing overall power density.

Beyond raw performance metrics, the IPA60R190E6 is designed for robustness and reliability. It features a integrated fast body diode with good reverse recovery characteristics, which is crucial for handling inductive switching and improving system reliability in circuits like power factor correction (PFC) and half-bridge topologies. Its high dv/dt capability and strong avalanche ruggedness ensure stable operation under stressful conditions, making it a robust choice for industrial environments.

The primary applications for this high-performance MOSFET are extensive, covering:

Switch-Mode Power Supplies (SMPS) for servers, telecom, and computing.

Power Factor Correction (PFC) stages in high-efficiency AC-DC converters.

Lighting solutions, including high-power LED drivers.

Solar inverters and other renewable energy systems.

Industrial motor drives and automation controls.

ICGOOODFIND: The Infineon IPA60R190E6 is a superior 600V CoolMOS™ power transistor that masterfully balances ultra-low conduction and switching losses. Its exceptional efficiency, driven by low RDS(on) and Qg, enables the design of compact, high-power-density, and highly efficient switching power systems, making it an outstanding component for next-generation power electronics.

Keywords: CoolMOS™, Low Gate Charge, High Efficiency, Superjunction MOSFET, Switching Applications.